2SC3650 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

SMD Type
Transistors
Product specification
2SC3650
Features
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage
(VCE(sat) 0.5V).
Large current capacity (IC=1.2V).
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
15
V
IC
1.2
A
Icp
2
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Marking
Marking
CF
Symbol
Testconditons
ICBO VCB=20V, IE=0
IEBO VEB=10V, IC=0
hFE VCE=5V, IC=500mA
fT VCE=10V, IC=50mA
Cob VCB=10V, f=1MHz
VCE(sat) IC=500mA, IB=10mA
VBE(sat) IC=500mA, IB=10mA
V(BR)CBO IC=10ìA, IE=0
V(BR)CEO IC=1mA, RBE=
V(BR)EBO IE=10ìA, IC=0
Min Typ Max Unit
0.1 ìA
0.1 ìA
800 1500 3200
220
MHz
17
pF
0.12 0.5 V
0.85 1.2 V
30
V
25
V
15
V
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