2SC3513 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Product specification
2SC3513
Features
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
15
V
VCEO
11
V
VEBO
2
V
IC
500
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Symbol
V(BR)CBO
ICEO
IEBO
ICBO
hFE
Cob
fT
PG
NF
Testconditons
IC= 10 mA, IE = 0
VCE = 10 V, RBE =
VEB = 1 V, IC = 0
VCB = 12 V, IE = 0
VCE = 5 V, IC = 20 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA,f = 900 MHz
VCE = 5 V, IC = 5 mA,f = 900 MHz
Min Typ Max Unit
15
V
1 ìA
1 ìA
1 ìA
50 120 250
1.0 1.5 pF
6.0
GHz
10
dB
1.6
dB
Marking
Marking
IS-
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