2SC3437 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)

Product specification
2SC3437
Features
High transition frequency: fT = 400 MHz (typ).
Low saturation voltage: VCE (sat) = 0.3 V (max).
High speed switching time: tstg = 15 ns (typ).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
40
V
VCEO
15
V
VEBO
5
V
IC
200
mA
IB
40
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2