2SC3429 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Product specification
2SC3429
Features
Low Noise Figure
NF=1.5dB,|S21e|²=16dB(f=500MHz)
NF=1.5dB,|S21e|²=10.5dB(f=1GHz)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
VCBO
17
V
VCEO
12
V
VEBO
3
V
IC
70
mA
IB
30
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collecter Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Noise Figue
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1V, IC = 0
hFE VCE = 10 V, IC = 20mA
Cob
VCB=10V,IE=0,f=1MHz
Cre
fT
VCE=10V.IC=20mA
|S21e|²(1) VCE=10V.IC=20mA,f=500MHz
|S21e|²(2) VCE=10V.IC=20mA,f=1GHz
NF(1) VCE=10V.IC=5mA,f=500MHz
NF(2) VCE=10V.IC=5mA,f=1GHz
Min Typ Max Unit
1 nA
1 nA
25
0.85
pF
0.57
pF
5
GHz
16
dB
10.5
dB
1.5
dB
1.7
dB
Marking
Marking
ME
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