2SC3421 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Product specification
TO-126C Plastic-Encapsulate Transistors
2SC3421 TRANSISTOR (NPN)
FEATURES
z Complementary to 2SA1358
z Suitable for Driver of 60 to 80 Watts Audio Amplifier
z High Breakdown Voltage
TO- 126C
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS* Ta=25℃ unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (T_a = 25 ℃)
Collector Dissipation (T_c = 25 ℃)
Junction Temperature
Storage Temperature Range
Value
Unit
120
V
120
V
5
V
1
A
0.1
A
1.25
W
10
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector cut-off current
Emitter cut-off current
Collector-Emitter Breakdown Voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CB=120V, I_E=0
V_EB=5 V, I_C=0
I_C=10m A, I_B=0
V_CE=5V, I_C=100mA
V_CE(sat) I_C=0.5 A, I_B=50mA
V_BE
V_CE=5V, I_C=500mA
f_T
V_CE=5V, I_C=100mA
C_ob
V_CB=10V, I_E=0, f=1MHz
Min Typ Max Unit
0.1
µA
0.1
µA
120
V
80
240
1
V
1
V
120
MHz
15
pF
CLASSIFICATION OF h_FE
Rank
Range
O
80-160
Y
120-240
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1