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| 2SC3420 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) | |||
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Product specification
TO-126C Plastic-Encapsulate Transistors
2SC3420 TRANSISTOR (NPN)
TO â 126C
FEATURES
z High DC Current Gain
z Low Saturation Voltage
z High Collector Power Dissipation
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
20
8
5
1.5
83
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
Collector cut-off current
ICBO
VCB=40V,IE=0
Emitter cut-off current
IEBO
VEB=8V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=2V, IC=0.5A
VCE=2V, IC=4A
Collector-emitter saturation voltage
VCE(sat)
IC=4A,IB=0.1A
Base-emitter voltage
VBE
VCE=2V, IC=4A
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
Transition frequency
fT
VCE=2V,IC=0.5A
Min Typ Max Unit
50
V
20
V
8
V
0.1 μA
0.1 μA
140
600
70
1
V
1.5
V
40
pF
100
MHz
CLASSIFICATION OF hFE(1)
RANK
Y
RANGE
140-240
GR
200-400
BL
300-600
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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