2SC3392 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistors

Product specification
2SC3392
Features
Adoption of FBET process.
High breakdown voltage : VCEO=50V.
Large current capacitiy and high fT.
Ultrasmall-sized package permitting sets
to be smallsized, slim.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
60
50
5
500
800
200
150
-55 to +150
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit
V
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Turn-on time
Storage time
Fall time
hFE Classification
Symbol
Testconditons
Min Typ Max Unit
IcBO VCB = 40V , IE = 0
0.1 ìA
IEBO VEB = 4V , IC = 0
0.1 ìA
hFE VCE = 5V , IC = 10mA
100
560
fT VCE = 10V , IC = 50mA
300
MHz
Cob VCB = 10V , f = 1MHz
3.7
pF
VCE(sat) IC = 100mA , IB =10mA
0.1 0.3 V
VBE(sat) IC = 100mA , IB =10mA
0.8 1.2 V
V(BR)CBO IC = 10ìA , IE = 0
60
V
V(BR)CEO ^{IC = 100ìA , RBE =}
50
V
V(BR)EBO ^{IE = 10ìA , IC = 0}
5
V
ton
70
ns
tstg ^{VCC = 20V, IC = 10IB1 = -10IB2 = 100mA}
400
ns
tf
70
ns
Marking
Rank
hFE
4
100 200
AY
5
140 280
6
200 400
7
280 560
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