2SC3380 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

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Product specification
2SC3380
■ Features
● High frequency high voltage amplifier
● High voltage switch
SOT-89
4.50±0.1
1.80±0.1
123
0.48±0.1
0.53±0.1
Unit:mm
1.50 ±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Total power dissipation
PC*
Junction temperature
Tj
Storage temperature
Tstg
* Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Rating
300
300
5
100
1
150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current gain
Transition frequency
Output Capacitance
■ Marking
Marking
AS
Symbol
Test conditons
V(BR)CBO IC = 10 μA, IE = 0
V(BR)CEO IC = 1 mA, IB = 0
V(BR)EBO IE = 10 μA, IC = 0
ICEO VCB = 250V,IB=0
VCE(sat) IC = 20 mA, IB = 2 mA
hFE VCE =20V,Ic=20mA
fT VCE = 20V ,Ic=20mA
Cob VCB = 20 V, IE = 0, f = 1.0 MHz
Unit
V
V
V
mA
W
℃
℃
Min Typ Max Unit
300
V
300
V
5
V
1.0 μA
1.5 V
30
200
80
MHz
4 pF
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