2SC3360 Datasheet, PDF (1/1 Pages) NEC – HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

Product specification
2SC3360
Features
High DC current gain.hFE=90 to 450
High voltage VCEO=200V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
200
V
VCEO
200
V
VEBO
5
V
IC
100
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulse test: tp 350 ìs; d 0.02.
hFE Classification
Marking
hFE
N15
90 180
N16
135 270
Symbol
Testconditons
ICBO VCB = 200V, IE=0
IEBO VEB = 5V, IC=0
VCE =10V , IC = 10mA
hFE
VCE =10V , IC = 50mA
VBE VCE =10V , IC = 10mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
fT VCE = 10V , IE = -10mA
Cob VCB = 30V , IE = 0 , f = 1.0MHz
ton IC = 10mA, IB1 = -IB2 = 1mA,
tstg VCC = 10 V
tf
VBE(off) = -2.5V
N17
200 450
1.Base
2.Emitter
3.collector
Min Typ Max Unit
100 nA
100 nA
90 200 450
50 200
0.6 0.64 0.7 V
0.1 0.3 V
0.8 1.2 V
160
MHz
2.8
pF
0.15
ìs
1.3
ìs
0.3
ìs
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