2SC3357 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
TransistIoCrs
Product specification
2SC3357
Features
Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Thermal Resistance
* mounted on 16 cm² X 0.7 mm(t) Ceramic Substrate
Symbol
VCBO
VCEO
VEBO
IC
PT*
Tj
Tstg
Rth(j-a)*
Rating
20
12
3.0
100
1.2
150
-65 to +150
62.5
Unit
V
V
V
mA
W
/W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Insertion Power Gain
Noise Figure
Output Capacitance
Transition frequency
*1 Pulse Measurement PW
Symbol
Testconditons
ICBO VCB = 10V,IE=0
IEBO VEB = 1.0V,IC=0
hFE *1 VCE =10V,Ic=20mA
|S21e|² VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
fT VCE = 10V ,Ic=20mA
350 ms, Duty Cycle 2 %
Min Typ Max Unit
1.0
A
1.0
A
50 120 250
9
dB
1.1
dB
1.8 3.0 dB
0.65 1.0 pF
6.5
GHz
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
hFE Classification
Marking
Rank
hFE
RH
RH
20 100
RF
RF
80 160
RE
RE
125 250
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