2SC3325 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY SOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Product specification
2SC3325
Features
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA).
High voltage: VCEO = 50 V (min).
Small package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
500
mA
IB
50
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
* classification O: 25 (min), Y: 40 (min).
hFE Classification
Marking
Rank
hFE
CE
O
Y
70 140
120 240
Symbol
Testconditons
ICBO VCB = 50 V, IE = 0
IEBO VEB = 5 V, IC = 0
hFE (1) VCE = 1 V, IC = 100 mA
hFE (2) * VCE = 6 V, IC = 400 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE VCE = 1 V, IC = 100 mA
fT VCE = 6 V, IC = 20 mA
Cob VCB = 6 V, IE = 0, f = 1 MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
70
240
25
0.1 0.25 V
0.8 1
V
300
MHz
7
pF
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