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| 2SC3311A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification) | |||
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Product specification
TO-92S Plastic-Encapsulate Transistors
2SC3311A TRANSISTOR (NPN)
FEATURES
z Optimum for High-density Mounting
z Allowing Supply with the Radial Taping
z Complementary to 2SA1309A
TO â 92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
7
0.1
300
417
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= 0.01mA,IE=0
60
V
V(BR)CEO IC=2mA,IB=0
50
V
V(BR)EBO IE=0.01mA,IC=0
7
V
ICBO
VCB=10V,IE=0
0.1
μA
ICEO
VCE=10V,IB=0
1
μA
IEBO
VEB=7V,IC=0
0.1
μA
hFE
VCE=10V, IC=2mA
160
460
VCE(sat) IC=100mA,IB=10mA
0.3
V
Cob
VCB=10V,IE=0, f=1MHz
3.5
pF
fT
VCE=10V,IC=2mA, f=200MHz
150
MHz
CLASSIFICATION OF hFE
RANK
RANGE
Q
160-260
R
210-340
S
290-460
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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