2SC3295 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIALTYPE (AUDIO FREQUENC AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Transistors
Product specification
2SC3295
Features
High hFE: hFE = 600 3600.
High voltage: VCEO = 50 V.
High collector current: IC = 150 mA (max).
Small package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
150
mA
IB
30
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Testconditons
Min Typ Max Unit
ICBO VCB = 50 V, IE = 0
0.1 ìA
IEBO VEB = 5 V, IC = 0
0.1 ìA
hFE VCE = 6 V, IC = 2 mA
600
3600
VCE (sat) IC = 100 mA, IB = 10 mA
0.12 0.25 V
fT VCE = 10 V, IC = 10 mA
100 250
MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
NF(1) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ
0.5
dB
NF(2) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ
0.3
dB
hFE Classification
Marking
hFE
PA
600 1800
PB
1200 3600
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