2SC3279 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Product specification
TO-92 Plastic-Encapsulate Transistors
2SC3279 TRANSISTOR (NPN)
FEATURES
z High DC current gain and excellent h_FE linearity
z Low saturation voltage
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
30
V
V_CEO
Collector-Emitter Voltage
10
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current –Continuous
2
A
P_C
Collector Power Dissipation
750
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=1mA , I_E=0
V_(BR)CEO I_C=10mA, I_B=0
V_(BR)EBO I_E=1mA, I_C=0
I_CBO
V_CB=30 V , I_E=0
I_EBO
V_EB=6 V , I_C=0
h_FE
V_CE=1V, I_C=0.5A
V_CE(sat) I_C=2A, I_B= 100mA
V_BE
I_C= 2A, V_CE=1V
f_T
V_CE=1V, I_C= 0.5A
C_ob
V_CB=10V,I_E=0,f=1MHz
Min Typ Max Unit
30
V
10
V
6
V
0.1
µA
0.1
µA
140
600
0.82
V
1.5
V
150
MHz
27
pF
CLASSIFICATION OF h_FE
Rank
Range
L
140-240
M
200-330
N
300-450
P
420-600
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