2SC3265 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS)

SMD Type
Transistors
Product specification
2SC3265
Features
High DC current gain: hFE (1) = 100320.
Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
5
V
IC
800
mA
IB
160
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 30 V, IE = 0
IEBO VEB = 50 V, IC = 0
V(BR) CEO IC = 10 mA, IB = 0
V(BR) EBO IE = 0.1 mA, IC = 0
hFE VCE = 1 V, IC = 100 mA
VCE (sat) IC = 500 mA, IB = 20 mA
VBE VCE = 1 V, IC = 10 mA
fT VCE = 5 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
25
V
5
V
100
320
0.4 V
0.5
0.8 V
120
MHz
13
pF
hFE Classification
Marking
hFE
EO
100 200
EY
160 320
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