2SC3149 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – For Switching Regulator

Product specification
TO-220-3L Plastic-Encapsulate Transistors
2SC3149 TRANSISTOR (NPN)
FEATURES
z High breakdown voltage(V_CBO>900V)
z Fast switching speed
z Wide ASO
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
900
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current –Continuous
0.5
A
P_C
Collector Power Dissipation
2
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*_{pulse test.}
CLASSIFICATION OF h_FE1
Rank
K
Symbol
Test conditions
Min
V_(BR)CBO* I_C=1mA,I_E=0
900
V_(BR)CEO* I_C=5mA,I_B=0
800
V_(BR)EBO I_E=1mA,I_C=0
7
I_CBO
V_CB=800V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE1*
V_CE=5V,I_C=100mA
10
h_FE2*
V_CE=5V,I_C=200mA
8
V_CE(sat) ^* I_C=200mA,I_B=40mA
V_BE(sat) ^* I_C=200mA,I_B=40mA
f_T
V_CE=10V, I_C=-100mA
C_ob
V_CB=10V, I_E=0,f =1MHz
t_on
I_C=1A,I_B1=0.2A,I_B2=-0.4A,
t_stg
R_L=400Ω,V_CC=400V
t_f
L
Range
10-20
15-30
Typ Max
10
10
40
1
1.5
15
30
1.0
3.0
0.7
M
20-40
Unit
V
V
V
μA
μA
V
V
MHz
pF
μS
μS
μS
http://www.twtysemi.com
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4008-318-123
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