2SC3125 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE RF AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Product specification
2SC3125
Features
Good Lineality of fT
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector Power Dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
4
V
IC
50
mA
IB
25
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Saturation Voltage Collector-Emitter
Saturation Voltage Baser-Emitter
Transition Frequency
Collector Output Capacitance
Collector-BaseTime Constant
Symbol
Testconditons
ICBO VCB = 30V, IE = 0
IEBO VEB = 3V, IC = 0
V(BR)CEO IC=10mA,IB=0
hFE VCE = 10 V, IC = 10mA
VCE(sat)
IC=15mA,IB=1.5mA
VBE(sat)
fT VCE = 10 V, IC = 10mA
Cob VCC=10V,IE=0,f=1MHz
Cc.rbb' VCB=10V,IC=1mA,f=30MHz
Marking
Marking
HH
Min Typ Max Unit
0.1 ìA
1.0 ìA
25
V
20 70 200
0.2 V
1.5 V
250 600
MHz
1.1 1.6 pF
25 ps
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