2SC3123 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE(TV VHF MIXER APPLICATIONS)

SMD Type
TransistIoCrs
Product specification
2SC3123
Features
High Conversion Gain :Gce=23dB(TYP.)
Low Reverse Transfer Capacitance : Cre=0.4F(TYP.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector Power Dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
3
V
IC
50
mA
IB
25
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse Transfer Capacitance
Transition Frequency
Conversion Gain
Noise Figure
Symbol
Testconditons
ICBO VCB = 25V, IE = 0
IEBO VEB = 3V, IC = 0
V(BR)CEO IC=1mA,IB=0
hFE VCE = 10 V, IC = 5mA
Cre VCB=10V,IE=0,f=1MHz
fT VCE = 10 V, IC = 5mA
Gce
VCC=12V,fL=260MHz,f=200MHZ
NF
Min Typ Max Unit
100 nA
1000 nA
20
V
40 150 300
0.4 0.5 pF
900 1400
MHz
20 23
dB
3.8 5.5 dB
Marking
Marking
HE
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