2SC2983 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DIRVER STAGE AMPLIFIER APPLICATIONS)

SMD Type
Transistors
Product specification
2SC2983
Features
High Transiton Frequency: Ft=100MHz(TYP.)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Base Current
Total Power dissipation Ta = 25
TC = 25
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
160
V
VCEO
160
V
VEBO
5
V
IC
1.5
A
IB
0.3
A
1
W
PC
15
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
collector cutoff current
emitter cutoff current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
VBE
fT
cob
Testconditons
VCB=160V,IE=0
VEB=5V,IC=0
IC=10mA,IB=0
IE=1mA,IC=0
VCE=5V,IC=100mA
IC=500mA,IB=50mA
VCE=5V,IC=500mA
VCE=10V,IC=100mA
VCB=10V.IE=0,f=1MHz
Min Typ Max Unit
1 ìA
1 ìA
160
V
5
V
70
240
1.5 V
1
V
100
MHz
25
pF
hFE Classification
Marking
O
hFE
70 to 140
Y
120 to 240
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1