2SC2982 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

SMD Type
Product specification
2SC2982
Features
Low Saturation Voltage
: VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA)
Small Flat Package
Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
2
A
Collector Current (Pulsed) *1
ICP
4
A
Base Current (DC)
IB
0.4
A
Base Current (Pulse) *1
IBP
0.8
A
Collector Power Dissipation
PC
500
mW
PC *2
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
*2 Mounted on a ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = 30V , IE = 0
IEBO VEB = 6V , IC = 0
V(BR)CEO IC = 10mA , IB = 0
V(BR)EBO IE = 1mA , IC = 0
VCE = 1V , IC = 0.5A
hFE
VCE = 1V , IC = 2A
VCE(sat) IC = 2A , IB = 50mA
VBE VCE = 1V , IC = 2A
fT VCE = 1V , IC = 0.5A
Cob VCB = 10V , IE = 0 , f = 1MHz
Min Typ Max Unit
0.1
A
0.1
A
10
V
6
V
140
600
70 140
0.2 0.5 V
0.86 1.5 V
150
MHz
27
pF
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