2SC2946 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR MP-3

SMD Type
Transistors
Product specification
2SC2946
Features
High Votage VCEO=200V
High speed tf ìs
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
330
V
Collector to emitter voltage
VCEO
200
V
Emitter to base voltage
VEBO
7
V
Collector current
ICP
2
A
Collector peak current *1
IC
4
A
Total Power dissipation Ta = 25 *2
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 PW 10ms, Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm²X0.7mm
Unit: mm
1 Base
2 Collector
3 Emitter
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