2SC2883 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APLICATIONS)

SMD Type
Product specification
2SC2883
Features
Suitable For Output Stage of 3 Watts Amplifier
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SA1203
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1.5
A
Base Current
IB
0.3
A
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on a ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = 30V , IE = 0
IEBO VEB = 5V , IC = 0
V(BR)CEO IC = 10mA , IB = 0
V(BR)EBO IE = 1mA , IC = 0
hFE VCE = 2V , IC = 500mA
VCE(sat) IC = 1.5A , IB = 0.03A
VBE VCE = 2V , IC = 500mA
fT VCE = 2V , IC = 500mA
Cob VCB = 10V , IE = 0 , f = 1MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
30
V
5
V
100
320
2
V
1
V
120
MHz
40 pF
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