2SC2881 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Product specification
2SC2881
Features
High Voltage : VCEO = 120V
High Transition Frequency : fT = 120MHz(typ.)
Small Flat Package
Complementary to 2SA1201
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
120
V
Collector-Base Voltage
VCBO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Base Current
IB
160
mA
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on a ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Emitter Cut-off Current
Collector Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transtion Frequency
Collector Output Capacitance
Symbol
Testconditons
IEBO VEB = 5V , IC = 0
ICBO VCB = 120V , IE = 0
V(BR)CEO IC = 10mA , IB = 0
V(BR)EBO IE = 1mA , IC = 0
hFE VCE = 5V , IC = 100mA
VCE(sat) IC = 500mA , IB = 50mA
VBE VCE = 5V , IC = 500mA
fT VCE = 5V , IC = 100mA
Cob VCB = 10V , IE = 0 , f = 1MHz
Min Typ Max Unit
0.1
A
0.1
A
120
V
5
V
80
240
1
V
1
V
120
MHz
30 pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2