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| 2SC2878A Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – For Muting and Switching Applications | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SC2878A TRANSISTOR (NPN)
TO-92
FEATURES
z High Emitter-Base Voltage
z Low On Resistance
High Reverse hFE>30(typ.) VCE=-2V,IC=-4mA
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
V
20
V
15
V
0.3
A
0.4
W
150
â
-55-+150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
Collector cut-off current
ICBO
VCB=50V,IE=0
Emitter cut-off current
IEBO
VEB=15V,IC=0
DC current gain
hFE
VCE=2V,IC=4mA
Collector-emitter saturation voltage
VCE(sat) IC=30mA,IB=3mA
Base-emitter voltage
VBE(on) VCE=2V,IC=4mA
Transition frequency
fT
VCE=6V,IC=4mA
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
Turn-on time
Storage time
ton
tS
VCC=12V,IC=12mA,IB=1.2mA
Fall time
tf
Min Typ Max Unit
50
V
20
V
15
V
0.1
μA
0.1
μA
200
1200
0.3
V
0.71
V
30
MHz
7
pF
160
ns
500
ns
130 ns
CLASSIFICATION of hFE
Rank
Range
A
200-700
B
350-1200
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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