2SC2859 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Product specification
2SC2859
Features
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
35
V
VCEO
30
V
VEBO
5
V
IC
500
mA
IB
50
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cut-off current
ICBO VCB = 35 V, IE = 0
Emitter cut-off current
IEBO VEB = 5 V, IC = 0
DC current gain
hFE1 VCE = 1V , IC = 100mA
hFE2 * VCE = 6V , IC = 400mA
Collector-emitter saturation voltage
VCE (sat) IC = 100 mA, IB = 10 mA
Base-emitter voltage
VBE VCE = 1V, IC = 100 mA
Transition frequency
fT VCE = 6V, IC = 20 mA
Collector output capacitance
Cob VCB = 6V, IE = 0 , f = 1 MHz
* hFE 2 classification O: 25 min, Y: 40 min, GR: 70 min
1.Base
2.Emitter
3.collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
70
400
25
0.1 0.25 V
0.8 1.0 V
300
MHz
7
pF
hFE Classification
Marking
hFE
WO
70 140
WY
120 240
WG
200 400
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