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| 2SC2785 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON TRANSISTOR | |||
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Product specification
TO-92S Plastic-Encapsulate Transistors
2SC2785 TRANSISTOR (NPN)
FEATURES
z High voltage
z Excellent hFE Linearity
z Complementary to 2SA1175 PNP transistor
TO-92S
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
60
V
50
V
5
V
0.1
A
0.25
W
150
â
-55-150
â
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE(1)
Rank
RF
Range
110-180
Symbol
Test conditions
V(BR)CBO IC=100μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=100μA, IC=0
ICBO
VCB=60V, IE=0
IEBO
VEB=5V, IC=0
hFE(1) VCE=6V, IC=1mA
hFE(2) VCE=6V, IC=0.1mA
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
VBE
VCE=6V, IC=1mA
fT
VCE=6V, IC=10mA
Cob
VCB=6V, IE=0,f=1MHz
NF
VCE=6V, Ic=0.1mA,f=1KHZ, Rg=2Kâ¦
MIN
60
50
5
110
50
150
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
600
0.3
V
1
V
0.65
V
MHz
4
pF
15
dB
JF
135-220
HF
170-270
FF
200-320
EF
250-400
KF
300-600
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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