2SC2780 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

■ Features
● High Collector-emitter voltage.
● Complements to PNP type 2SA1173
Product specification
2SC2780
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP *¹
Collector power dissipation
PC
PC *²
Junction temperature
Tj
Storage temperature
Tstg
*1. Pw≤10ms,duty cycle ≤50%
*2. When mounted on ceramic substrate of 16cm² × 0.7mm
Rating
140
140
5
50
2.5
0.5
2
150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditons
ICBO VCB=140V
IEBO VEB=5V
VCE=10V,IC=1mA
hFE
VCE=10V,IC=10mA
VCE(sat) IC=20mA,IB=2mA
VBE(sat) IC=20mA,IB=2mA
fT VCE=10V, IE= -10mA
Cob VCB=10V, IE=0A, f=1MHz
■ hFE Classification
Marking
hFE
NM
82～180
NL
120～270
NK
180～390
Unit
V
V
V
mA
A
W
W
℃
℃
Min Typ Max Unit
0.1 μA
0.1 μA
50 180
90
400
0.07 0.6 V
0.75 1.0 V
120
MHz
2.3
pF
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