2SC2776 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar

Product specification
2SC2776
Features
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
4
V
IC
30
mA
PC
100
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Gain bandwidth product
Noise figure
Power gain
Symbol
Testconditons
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ICBO VCB = 10V, IC = 0
hFE VCE = 6 V, IC = 1 mA
VCE(sat) IC = 10 mA, IB = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
fT VCE = 6 V, IC = 1 MA
NF
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ù
VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg =
PG 100Ù, RL = 550Ù
Min Typ Max Unit
30
V
20
V
4
V
0.5 ìA
35
200
0.8 1.2 V
1.1
pF
320
MHz
5.5
dB
17
dB
hFE Classification
Marking
Rank
hFE
VA
A
35 70
VB
B
60 120
VC
C
100 200
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