2SC2757 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Transistor

DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.15
W
125
℃
-55~125
℃
Product specification
2SC2757
http://www.twtysemi.com
[e-mail]
4008-318-123
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