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| 2SC2717 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SC2717 TRANSISTOR (NPN)
FEATURES
High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ)
Good Linearity of hFE.
TO-92
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
50
mA
PC
Collector Power Dissipation
300
mW
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55~+150 â
RÎJA
Thermal Resistance From Junction To Ambient
417
â/W
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=3V,IC=0
DC current gain
hFE1
VCE=12.5V,IC=12.5mA
DC current gain
Collector-emitter saturation voltage
hFE2
VCE(sat)
VCE=5V,IC=50mA
IC=15mA,IB=1.5mA
Base-emitter saturation voltage
VBE(sat) IC=15mA,IB=1.5mA
Transition frequency
fT
VCE=12.5V,IC=12.5mA
Collector output capacitance
Collector-base time constant
Cob
CC.rbbâ
VCB=10V,IE=0,f=30MHz
VCB=10V,IE=-1mA,f=30MHz
Power gain (fig.)
Gpe VCC=12.5V,IE=-12.5mA,f=45MHz
Min Typ Max Unit
30
V
25
V
4
V
0.1
μA
0.1
μA
90
320
40
0.2
V
1.5
V
300
MHz
0.8
2.0
pF
25
ps
28
36
dB
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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