2SC2714 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS

Product specification
2SC2714
Features
Small reverse transfer capacitance: Cre = 0.7 pF (typ.)
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
4
V
IC
20
mA
IE
4
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Symbol
Testconditons
ICBO VCB = 18 V, IE = 0
IEBO VEB = 4 V, IC = 0
hFE VCE = 6 V, IC = 1 mA
Cre VCB = 6 V, f = 1 MHz
fT VCE = 6 V, IC = 1 mA
Cc.rbb'
NF
VCE = 6 V, IE = -1 mA, f = 100 MHz,
Gpe
Min Typ Max Unit
0.5 ìA
0.5 ìA
40
200
0.70
pF
550
MHz
30 ps
2.5 5.0 dB
17 23
dB
hFE Classification
Marking
Rank
hFE
QR
R
40 80
QO
O
70 140
QY
Y
100 200
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1