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| 2SC2655 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) | |||
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TO-92L Plastic-Encapsulate Transistors
Product specification
2SC2655 TRANSISTOR (NPN)
TO-92L
FEATURES
z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A)
z High speed switching time: tstg=1μs(Typ.)
z Complementary to 2SA1020
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Symbol
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current âContinuous
2
A
PC
Collector Power Dissipation
0.9
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1.EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Tune on Time
Switch time
Storage Time
Fall Time
Symbol Test conditions
V(BR)CBO IC=100μA,IE=0
V(BR)CEO
V(BR)EBO
IC=10mA,IB=0
IE=100μA,IC=0
ICBO
VCB=50V,IE=0
IEBO
hFE(1)
VEB=5V,IC=0
VCE=2V,IC=500mA
hFE(2) VCE=2V,IC=1.5A
VCE(sat)
VBE(sat)
IC=1A,IB=0.05A
IC=1A,IB=0.05A
fT
VCE=2V,IC=0.5A
Cob
VCB=10V,IE=0,f=1MHz
ton
VCC=30V,Ic=1A,
tstg
IB1=-IB2=0.05A
tf
CLASSIFICATION OF hFE(1)
Rank
Range
100-200
200-300
MIN TYP MAX UNIT
50
V
50
V
5
V
1
μA
1
μA
70
240
40
0.5
V
1.2
V
100
MHz
30
pF
0.15
2
μs
0.15
300-400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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