2SC2619 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Product specification
2SC2619
Features
High frequency amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
30
V
VEBO
5
V
IC
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Symbol
Testconditons
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ICBO VCB = 20V, IE=0
IEBO VEB = 2V, IC=0
hFE VCE = 12V , IC = 2mA
VCE(sat) IC = 10mA , IB = 1mA
VBE VCE = 12V , IC = 2mA
fT VCE = 12V , IC = 2mA
Cob VCB = 10V , IE=0, f = 1MHz
NF
VCE = 6V, IC = 2mA, f = 1MHz, Rg =
500Ù
Min Typ Max Unit
30
V
30
V
5
V
0.5 ìA
0.5 ìA
60
200
1.1 V
0.75 V
230
MHz
3.5 pF
5
dB
hFE Classification
Marking
hFE
FB
60 120
FC
100 200
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