2SC2458 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO AMPLIFIER APPLICATIONS)

Product specification
TO-92S Plastic-Encapsulate Transistors
2SC2458 TRANSISTOR (NPN)
FEATURES
z High Current Capability
z High DC Current Gain
z Excellent h_FE Linearity
z Complementary to 2SA1048
TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
50
5
0.15
200
625
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
C_ob
f_T
Test conditions
I_C= 0.1mA,I_E=0
I_C=1mA,I_B=0
I_E=0.1mA,I_C=0
V_CB=50V,I_E=0
V_EB=5V,I_C=0
V_CE=6V, I_C=2mA
I_C=100mA,I_B=10mA
V_CB=10V,I_E=0, f=1MHz
VCE=10V,IC=1mA
Min Typ Max Unit
50
V
50
V
5
V
0.1
μA
0.1
μA
70
700
0.25
V
3.5
pF
80
MHz
CLASSIFICATION OF h_FE
RANK
O
RANGE
70-140
Y
120-240
GR
200-400
BL
350-700
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