2SC2411K Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (32V, 0.5A)

Features
High ICMax. ICMax. = 0.5A
Low VCE(sat). Optimal for low voltage operation.
NPN silicon transistor
Product specification
2SC2411K
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
* PC must not be exceeded.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
40
V
VCEO
32
V
VEBO
5
V
IC
0.5
A
PC
0.2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VCBO IC = 100ìA
VCEO IC = 1mA
VEBO IE = 100ìA
ICBO VCB = 20V
IEBO VEB = 4V
hFE VCE = 3V, IC = 100mA
VCE(sat) IC/IB = 500mA/50mA
Cob VCB = 10V, IE = 0A, f = 1MHz
fT VCE = 5V, IE = -20mA, f = 100MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
40
V
32
V
5
V
1
A
1
A
120
390
0.6 V
6.5
pF
250
MHz
hFE Classification
Marking
Rank
hFE
CQ
Q
120 270
CR
R
180 390
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