2SC2406 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon PNP Epitaxial Planar Type

Product specification
2SC2406
Features
Low noise voltage NV.
High forward current transfer ratio hFE.
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
55
V
VCEO
55
V
VEBO
5
V
IC
50
mA
ICP
100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base-emitter voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
VBE VCE = 1 V, IC = 100 mA
ICBO VCB = 10 V, IE = 0
ICEO VCE = 10 V, IB = 0
hFE VCE = 5 V, IC = 2 mA
VCE(sat) IC = 100 mA, IB = -10 mA
fT VCB = 5 V, IE = -2 mA, f = 200 MHz
VCE = 10 V, IC = 1 mA, GV = 80 dB
NV
Rg = 100 kÙ, Function = FLAT
Min Typ Max Unit
55
V
55
V
5
V
0.7 1.0 V
0.1 ìA
1 ìA
180
700
0.6 V
200
MHz
110
mV
hFE Classification
Marking
hFE
TR
180 360
TS
260 520
TT
360 700
http://www.twtysemi.com
[e-mail]
4008-318-123
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