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| 2SC2314 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – 27MHz CB Transceiver Driver Applications | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
2SC2314 TRANSISTOR (NPN)
TO â 126
FEATURES
z Transceiver Driver Applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
75
45
5
1
0.75
167
150
-55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
Collector cut-off current
ICBO
VCB=40V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=5V, IC=500mA
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=50mA
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
Transition frequency
fT
VCE=10V,IC=50mA
Min Typ Max Unit
75
V
45
V
5
V
1
μA
1
μA
60
320
0.6
V
1.2
V
25 pF
180
MHz
CLASSIFICATION OF hFE
RANK
RANGE
D
60-120
E
100-200
F
160-320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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