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| 2SC2274 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SC2274 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Current
z Low Saturation Voltage
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
0.5
600
208
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2) *
VCE(sat)
VBE (sat)
Cob
fT
Test conditions
IC= 0.01mA,IE=0
IC=1mA,IB=0
IE=0.01mA,IC=0
VCB=40V,IE=0
VEB=4V,IC=0
VCE=5V, IC=50mA
VCE=5V, IC=400mA
IC=400mA,IB=40mA
IC=400mA,IB=40mA
VCB=10V, f=1MHz
VCE=10V,IC=10mA
Min Typ Max Unit
60
V
50
V
5
V
1
μA
1
μA
60
320
35
0.6
V
1.2
V
5
pF
120
MHz
CLASSIFICATION OF hFE(1)
RANK
D
RANGE
60-120
E
100-200
F
160-320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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