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| 2SC2230 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE GENERAL AMPLIFIER, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS) | |||
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Product specification
TO-92MOD Plastic-Encapsulate Transistors
2SC2230/2230A TRANSISTOR (NPN)
FEATURE
z High voltage: VCEO=180V(2SC2230A)
z High DC Current Gain
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage 2SC2230
160
V
2SC2230A
180
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
0.8
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55 to +150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min
V(BR)CBO IC= 100µA , IE=0
200
IC= 10 mA, IB=0 2SC2230
160
V(BR)CEO
2SC2230A 180
V(BR)EBO
IE= 10µA, IC =0
5
ICBO
VCB=200V, IE=0
IEBO
VEB=5V, IC=0
hFEï¼
VCE=10 V, IC= 10mA
120
hFE2
VCE=10 V, IC= 50mA
80
VCE(sat)
IC= 50m A, IB= 5mA
VBE
IC= 1 mA, VCE= 10V
0.5
fT
VCE= 10 V, IC= 10mA
50
Cob
VCB=10V,IE=0,f=1MHz
Max
0.1
0.1
400
0.5
0.7
7
CLASSIFICATION OF hFE1
Rank
Range
Y
120-240
GR
200-400
Unit
V
V
V
µA
µA
V
V
MHz
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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