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| 2SC2229 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAHE SWITCHING, DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS) | |||
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Product specification
TO-92MOD Plastic-Encapsulate Transistors
2SC2229 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Transition Frequency
TO â 92M
TO â 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
200
150
5
50
800
156
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE (sat)
fT
Test conditions
IC= 100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=200V,IE=0
VEB=5V,IC=0
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=50mA
IC=10mA,IB=1mA
IC=10mA,IB=1mA
VCE=30V,IC=10mA
Min Typ Max Unit
200
V
150
V
5
V
0.1
μA
0.1
μA
70
240
50
50
0.5
V
1
V
80
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
70-140
Y
120-240
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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