2SC2223 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

Product specification
2SC2223
Features
Micro package.
High gain bandwidth product fT=600MHz TYP
Low output capacitance. Cob=1.0PF TYP
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
4
V
IC
20
mA
PT
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Base-emitter voltage
Collector-emitter saturation voltage
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
Symbol
Testconditons
ICBO VCB = 25V, IE=0
IEBO VEB = 3.0V, IC=0
hFE VCE = 6.0V , IC = 1mA
VBE IC = 10mA , IB = 1.0mA
VCE(sat) IC = 10mA , IB = 1.0mA
fT VCE = 6.0V , IE = -1.0mA
Cob VCB = 6.0V , IE = 0 , f = 1.0MHz
Cc-rb'b VCE = 6.0V, IE = -1.0mA, f = 31.9MHz
NF
VCE = 6.0V, IE = -1.0mA, RG = 50Ù,
f = 100MHz
Min Typ Max Unit
100 nA
100 nA
40 90 180
0.72
V
0.1 0.3 V
400 600
MHz
1.0
pF
12
ps
3
dB
hFE Classification
Marking
hFE
F12
40 80
F13
60 120
F14
90 180
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