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| 2SC2001 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SC2001 TRANSISTOR (NPN)
FEATURES
z High hFE and Low VCE(sat)
hFE(IC=100mA) : 200(Typ)
VCE(sat)(700mA): 0.2V (Typ)
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS(Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
5
700
600
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
Min
V(BR)CBO IC=100µA, IE=0
30
V(BR)CEO IC=10mA , IB=0
25
V(BR)EBO IE=100µA, IC=0
5
ICBO
VCB=30 V, IE=0
ICEO
VCE=20 V, IB=0
IEBO
VEB=5 V, IC=0
hFE
VCE=1V, IC=100mA
90
VCE(sat) IC=700mA, IB= 70mA
VBE(sat) IC= 700mA, IB=70mA
VCE=6V, IC= 10mA
fT
50
f = 30MHz
Unit
V
V
V
mA
mW
â
â
Max Unit
V
V
V
0.1
µA
0.1
µA
0.1
µA
400
0.6
V
1.2
V
MHz
CLASSIFICATION OF hFE
Rank
Range
M
90-180
L
135-270
K
200-400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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