2SC1923 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS)

Product specification
TO-92 Plastic-Encapsulate Transistors
2SC1923 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching Application
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
30
4
0.02
100
1250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
f_T
Test conditions
I_C= 0.1mA,I_E=0
I_C=1mA,I_B=0
I_E=0.1mA,I_C=0
V_CB=18V,I_E=0
V_EB=4V,I_C=0
V_CE=6V, I_C=1mA
VCE=6V,IC=1mA
Min Typ Max Unit
40
V
30
V
4
V
0.5
μA
0.5
μA
40
200
550
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
R
40-80
O
70-140
Y
100-200
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