2SC1740S Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

Product specification
TO-92S Plastic-Encapsulate Transistors
2SC1740S TRANSISTOR (NPN)
FEATURES
Low Cob
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
50
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current –Continuous
150
mA
P_C
Collector Power Dissipation
300
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=50μA , I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA, I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=7V, I_C=0
DC current gain
h_FE
V_CE=6V, I_C=1mA
Collector-emitter saturation voltage
V_CE(sat) I_C=50mA,I_B=5mA
Transition frequency
f_T
V_CE=12V, I_C=-2mA,f=100MHz
Collector output capacitance
C_ob
V_CB=12V,I_E=0,f=1MHz
Min Typ Max
60
50
7
0.1
0.1
120
560
0.4
100
2
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
Q
120-270
R
180-390
S
270-560
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