2SC1623 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

Product specification
2SC1623
Features
High DC Current Gain:
hFE = 200 TYP.
VCE = 6.0 V, IC = 1.0 mA
High Voltage:
VCE O = 50 V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Output capacitance
Transiton Frequency
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 60V, IE=0
IEBO VEB = 5V, IC=0
hFE VCE = 6V , IC = 1mA
VCE(sat) IC = 100mA , IB = 10mA
VBE(sat) IC = 100mA , IB = 10mA
VBE VCE = 6V , IC = 1mA
Cob VCB = 6V , IE = 0 , f = 1.0MHz
fT VCE = 6V , IE = -10mA
hFE Classification
Marking
L4
hFE
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
Min Typ Max Unit
0.1
A
0.1
A
90 200 600
0.15 0.3 V
0.86 1
V
0.55 0.62 0.65 V
3.0
pF
250
MHz
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4008-318-123
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