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2SC1318A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency driver amplification)
Product specification
TO-92 Plastic-Encapsulate Transistors
2SC1318A TRANSISTOR (NPN)
TO-92
FEATURES
· Collector Output Capacitance :
Cob=11 pF (TYP),20 pF (MAX)
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise note )
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Power Dissipation
750
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC =10μA,IE=0
V(BR)CEO IC=2mA,IB=0
V(BR)EBO IE=10μA,IC=0
ICBO
VCB=20V,IE=0
hFE(1) VCE=10V,IC=150mA
hFE(2) VCE=10V,IC=500mA
VCE(sat) IC=300mA,IB=30mA
VBE(sat) IC=300mA,IB=30mA
fT
VCE=10V,IC=50mA,f=200MHz
Cob
VCB=10V,IE=0,f=1MHz
MIN TYP MAX UNIT
80
V
70
V
5
V
0.1
μA
85
340
40
0.6
V
1.5
V
120
MHz
11
20
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
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