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| 2SC1318 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SC1318 TRANSISTOR (NPN)
FEATURES
z Low Collector to Emitter Saturation Voltage VCE(sat)
z Complementary Pair with 2SA720
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
7
500
625
200
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE (sat)
Cob
fT
Test conditions
IC= 0.01mA,IE=0
IC=10mA,IB=0
IE=0.01mA,IC=0
VCB=20V,IE=0
VEB=6V,IC=0
VCE=10V, IC=150mA
VCE=10V, IC=500mA
IC=300mA,IB=30mA
IC=300mA,IB=30mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=50mA, f=200MHz
Min Typ Max Unit
60
V
50
V
7
V
0.1 μA
0.1 μA
85
340
40
0.6
V
1.5
V
15
pF
200
MHz
CLASSIFICATION OF hFE(1)
RANK
Q
RANGE
85-170
R
120-240
S
170-340
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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