2SB956 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)

Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Product specification
2SB956
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-20
V
VEBO
-5
V
IC
-1
A
ICP
-2
A
PC
1
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
* Pulse measurement.
3
Symbol
Testconditons
VCBO IC = -1 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -10 V, IE = 0
hFE VCE = -2 V, IC = -500 mA
VCE(sat) IC = -1 A, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
fT VCB = -6 V, IE = 50 mA, f = 200 MHz
Cob VCB = -6 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-20
V
-5
V
-1 nA
130
280
-0.5 V
-1.2 V
200
MHz
40
pF
hFE Classification
Marking
hFE
HR
130 210
HS
180 280
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