2SB930A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon PNP Epitaxial Planar Type

Product specification
2SB930A
Features
High forward current transfer ratio hFE which has satisfactory linearity.
Low collector-emitter saturation voltage VCE(sat).
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-80
V
VEBO
-5
V
IC
-4
A
ICP
-8
A
PC
1.3
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
Testconditons
VCEO IC = -30 mA, IB = 0
ICES VCE = -80 V,VBE = 0
ICEO VCE = -60 V,IB = 0
IEBO VEB = -5 V, IC = 0
VCE = -4 V, IC = -1 A
hFE
VCE = -4 V, IC = -3 A
VBE VCE = -4 V, IC = -3 A
VCE(sat) IC = -4 A, IB = -0.4 A
fT VCE = -10 V, IC = -0.5 A , f = 10 MHz
ton
tstg
IC = -4 A,IB1 = -0.4 A,IB2 = 0.4 A,
VCC = -50 V
tf
Min Typ Max Unit
-80
V
-400 ìA
-700 ìA
-1 mA
70
250
15
-2 V
-1.5 V
20
MHz
0.2
ìs
0.5
ìs
0.2
ìs
hFE Classification
Rank
hFE
Q
70 150
P
120 250
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