2SB928A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon PNP Epitaxial Planar Type

Product specification
2SB928A
Features
High collector to emitter VCEO
High collector power dissipation PC
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation TC=25
Ta=25
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Symbol
Rating
Unit
VCBO
-200
V
VCEO
-180
V
VEBO
-6
V
ICP
-3
A
IC
-2
A
30
PC
W
1.3
Tj
150
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE
VBE
VCE(sat)
fT
Testconditons
VCB = -200V, IE = 0
VEB = -4V, IC = 0
IC = -500ìA, IE = 0
IC = -5mA, IB = 0
IE = -500ìA, IC = 0
VCE = -10V, IC = -150mA
VCE = -10V, IC = -400mA
VCE = -10V, IC = -400mA
IC = -500mA, IB = -50mA
VCE = -10V, IC = -0.5A, f = 10MHz
Min Typ Max Unit
-50 ìA
-50 ìA
-200
V
-180
V
-6
V
60
240
50
-1
V
-1
V
30
MHz
hFE Classification
Rank
hFE
Q
60 to 140
P
100 to 240
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